e section EC has high conductance and it is possible to consider it short-circuited.
Static parameters are the saturation currents in electrodes the transistor and residual voltages. A voltage ratio and currents relevant electrodes give magnitudes of resistances of saturation:
;.
3. Fissile condition . In a fig. 6.4 the flat one-dimensional model of the transistor is shown, which emitter junction is switched on in a forward direction, and collector junction - in backward. Such insert corresponds to a fissile condition, and the transistor has intensifying properties. The principle of operation of the transistor in a fissile condition grounded on use of the following phenomena:
- injection of majority carriers through emitter junction;
- transport of injected carriers through basis owing to diffusions and drift;
- recombination of nonequilibrium carriers in basis;
- extractions of carriers from basis in a collector by a region of collector junction.
The injection of carriers stipulates transiting through emitter pn-junction of diffusive currents: hole and electronic.
In an external circuit of emitter the current of injection flows past
, (6.2)
where - hole current of injection of the emitter;
- electronic current of injection of the emitter.
For transistor structure p-n-p of a type the relation between admixtures in the emitter and basis is defined, as:. Therefore. p> The relation between component of an emitter current is evaluated coefficient of injection
(6.3)
The injection of carriers from the emitter in basis rises density
minority carriers in basis. Their density on boundary of emitter junction for pnp of structure is defined by a relation
(6.4)
Appeared near to emitter junction in basis a charge of vacant electron sites almost instantaneous, during a dielectric relaxation seconds, is cancelled by a charge of electrons affluent in basis from a radiant. Circuit of a current the emitter - basis appears made and ensures course of an emitter current. Magnification near to emitter junction the electron concentrations and vacant electron sites are established by a lapse rate of densities nonequilibrium carriers in basis andВ . Under an operation of lapse rates densities there is a diffusive driving of nonequilibrium vacant electron sites and electrons through basis from the emitter to a collector.
Diffusion of vacant electron sites in basis is attended their recombination with by electrons. On place of recombined electrons in basis from the external circuits of a radiant act other electrons, establishing together with electrons leaving basis in the emitter, base current recombinations. As breadth of basis is much less diffusion lengths of carriers, a loss of carriers in basis at the expense of recombination is inappreciable, and current of a recombination on one, two order are less than a current.
The vacant electron sites injected by the emitter in basis and which have reached collector backswitched junction, get in its accelerating region and are thrown in region of a collector. The collector current is established:.
Process of transport of minority nonequilibrium carriers through basis is evaluated by a transport coefficient. Coefficient of transport depends from breadth of basisВ and diffusion length of vacant electron sites:
(6.5)
Than more vacant electron sites is injected by the emitter in basis, than more them extract a collector, augmenting a collector current. Therefore current is proportional to an emitter current and is termed current controlled of a collector, which in view of relations (6.3) and (6.5) is defined by a relation (6.6) also records as follows:
(6.6)
- is termed as an integrated (static) transmission factor current of emitter in a collector circuit and in view of relations (6.3), (6,5) is defined by the following formula:
. (6.7)
Opportunity of control of an output current of the transistor by change entering current is the important property of the bipolar transistor, allowing to use it as a fissile device of electronic circuits.
Except for a controllable part of a collector current, in an electrode
collector the unguided part of a current - thermal current backswitched of junction flows past. It is similar to a current backswitched of a crystal diode and consequently has received a title of a backward collector current.
index c means, that it - current backswitched of collector junction,
index b - the measurings occur in the circuit with CB,
index 0 - the measurings occur at = 0, ie No-load operation on an input.
The direction of a backward collector current coincides with a direction of a controllable part of a collector current and consequently
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